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CPC3909 PDF预览

CPC3909

更新时间: 2024-11-07 01:05:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
7页 146K
描述
Depletion-Mode FET

CPC3909 数据手册

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CPC3909  
400V N-Channel  
Depletion-Mode FET  
INTEGRATED  
CIRCUITS  
DIVISION  
PRELIMINARY  
Parameter  
Rating  
400  
Units  
Description  
The CPC3909 is an N-channel, depletion mode Field  
Effect Transistor (FET) that is available in an  
SOT-223 package (CPC3909Z) and an SOT-89  
package (CPC3909C). Both utilize IXYS Integrated  
Circuits Division’s proprietary vertical DMOS process  
that realizes world class, high voltage MOSFET  
performance in an economical silicon gate process.  
The vertical DMOS process yields a highly reliable  
device, particularly for use in difficult application  
environments such as telecommunications, security,  
and power supplies.  
Drain-to-Source Voltage - V(BR)DSX  
Max On-Resistance - RDS(on)  
Max Power  
V
6
SOT-89 Package  
1.1  
2.5  
W
SOT-223 Package  
Features  
400V Drain-to-Source Voltage  
Depletion Mode Device Offers Low RDS(on)  
at Cold Temperatures  
CPC3909Z and the CPC3909C have a typical  
on-resistance of 4.5and a drain-to-source voltage  
of 400V. As with all MOS devices, the FET structure  
prevents thermal runaway and thermally induced  
secondary breakdown.  
Low On-Resistance: 4.5(Typical) @ 25°C  
Low VGS(off) Voltage  
High Input Impedance  
Low Input and Output Leakage  
Small Package Size SOT-89 and SOT-223  
PC Card (PCMCIA) Compatible  
PCB Space and Cost Savings  
Ordering Information  
Part Number  
CPC3909CTR  
CPC3909ZTR  
Description  
SOT-89: Tape and Reel (1000/Reel)  
Applications  
LED Drive Circuits  
Telecommunications  
Normally On Switches  
Ignition Modules  
Converters  
SOT-223: Tape and Reel (1000/Reel)  
Security  
Power Supplies  
Regulators  
Circuit Symbol  
Package Pinout:  
D
D
G
4
2
1
3
S
G
D
S
Pin Number  
Name  
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
1
DS-CPC3909-R00D  
PRELIMINARY  

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