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CPC3982 PDF预览

CPC3982

更新时间: 2024-11-22 01:18:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 122K
描述
N-Channel Depletion-Mode

CPC3982 数据手册

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CPC3982  
N-Channel Depletion-Mode  
Vertical DMOS FET  
INTEGRATED  
CIRCUITS  
DIVISION  
PRELIMINARY  
Description  
V(BR)DSX  
V(BR)DGX  
/
RDS(on)  
(max)  
IDSS (min)  
Package  
The CPC3982 is an N-channel, depletion mode, field  
effect transistor (FET) that utilizes IXYS Integrated  
Circuits Division’s proprietary third-generation vertical  
DMOS process. The third-generation process realizes  
world class, high voltage MOSFET performance  
in an economical silicon gate process. Our vertical  
DMOS process yields a robust device, with high  
input impedance, for use in high-power applications.  
The CPC3982 is a highly reliable device that has  
been used extensively in our Solid State Relays for  
industrial and telecommunications applications.  
800V  
380  
20mA  
SOT-23  
Features  
High Breakdown Voltage: 800V  
Low VGS(off) Voltage: -1.4V to -3.1V  
Depletion Mode Device Offers Low RDS(on)  
at Cold Temperatures  
High Input Impedance  
Small Package Size: SOT-23  
This device excels in power applications that require  
low drain-source resistance, particularly in cold  
environments such as automotive ignition modules.  
Applications  
Constant Current Regulator  
Ignition Modules  
The CPC3982 has a minimum breakdown voltage of  
800V, and is available in an SOT-23 package. As with  
all MOS devices, the FET structure prevents thermal  
runaway and thermal-induced secondary breakdown.  
Normally-On Switches  
Solid State Relays  
Converters  
Telecommunications  
Power Supply  
Ordering Information  
Part #  
CPC3982TTR  
Description  
N-Channel Depletion Mode FET, SOT-23 Pkg.  
Tape and Reel (3000/Reel)  
Package Pinout  
Circuit Symbol  
D
S
D
3
G
1
2
G
S
(SOT-23)  
1
DS-CPC3982-R00D  
PRELIMINARY  

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