Datasheet > CPC3960

CPC3960

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅高压晶体管场效应晶体管栅极
页数	文件大小	规格书
6页	158K
描述
我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经济的硅栅极工艺中实现了世界级的高压MOSFET性能。垂直DMOS工艺为具有高输入阻抗的高功率应用提供了一

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CPC3960 数据手册

CPC3960

600V N-Channel

Depletion-Mode FET

INTEGRATED

CIRCUITS

DIVISION

Description

BV_DSX

BV_DGX

600V

R_DS(on)

(max)

44

I_DSS(min)

Package

The CPC3960 is a 600V, N-channel, depletion-mode,

Field Effect Transistor (FET) created using IXYS

Integrated Circuits Division’s proprietary vertical DMOS

process.Yielding a robust device with high input

impedance, this process enables world class, high

voltage MOSFET performance with an economical

silicon gate architecture.

100mA

SOT-223

Features

• High Breakdown Voltage: 600V

• On-Resistance: 44 max. at 25ºC

• Low V_GS(off)Voltage: -1.4 to -3.1V

• High Input Impedance

As with all MOS devices, the FET structure prevents

thermal runaway and thermal-induced secondary

breakdown, which makes the CPC3960 ideal for use

in high-power applications.

• Small Package Size: SOT-223

Applications

The CPC3960 is a highly reliable FET device that

has been used extensively in IXYS Integrated Circuits

Division’s Solid State Relays for industrial and

telecommunications applications.

• Current Regulator

• Normally-On Switches

• Solid State Relays

• Converters

• Telecommunications

• Power Supply

The CPC3960 is available in the SOT-223 package.

Ordering Information

Part #

CPC3960ZTR

Description

SOT-223: Tape and Reel (1000/Reel)

Package Pinout

Circuit Symbol

DS-CPC3960-R02

www.ixysic.com

12 3 4 5 6

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