Datasheet > CPC3909

CPC3909

更新时间： 2024-11-19 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		栅高压晶体管场效应晶体管栅极
页数	文件大小	规格书
7页	165K
描述
我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经济的硅栅极工艺中实现了世界级的高压MOSFET性能。垂直DMOS工艺为具有高输入阻抗的高功率应用提供了一

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CPC3909 数据手册

CPC3909

400V, 6N-Channel

Depletion-Mode FET

INTEGRATED

CIRCUITS

DIVISION

Parameter

Rating

400

Units

Description

The CPC3909 is an N-channel, depletion mode Field

Effect Transistor (FET) that is available in an

SOT-223 package (CPC3909Z) and an SOT-89

package (CPC3909C). Both utilize IXYS Integrated

Circuits Division’s proprietary vertical DMOS process

that realizes world class, high voltage MOSFET

performance in an economical silicon gate process.

The vertical DMOS process yields a highly reliable

device, particularly for use in difficult application

environments such as telecommunications, security,

and power supplies.

Drain-to-Source Voltage - V_(BR)DSX

Max On-Resistance - R_DS(on)

Max Power



SOT-89 Package

1.1

2.5

SOT-223 Package

Features

• 400V Drain-to-Source Voltage

• Depletion Mode Device Offers Low R_DS(on)

at Cold Temperatures

CPC3909Z and the CPC3909C have a typical

on-resistance of 4.5 and a drain-to-source voltage

of 400V. As with all MOS devices, the FET structure

prevents thermal runaway and thermally induced

secondary breakdown.

• Low On-Resistance: 4.5 (Typical) @ 25°C

• Low V_GS(off)Voltage

• High Input Impedance

• Low Input and Output Leakage

• Small Package Size SOT-89 and SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

• Flammability Rating UL 94 V-0

Ordering Information

Part Number

CPC3909CTR

CPC3909ZTR

Description

SOT-89: Tape and Reel (1000/Reel)

Applications

SOT-223: Tape and Reel (1000/Reel)

• LED Drive Circuits

• Telecommunications

• Normally On Switches

• Ignition Modules

• Converters

• Security

• Power Supplies

• Regulators

Circuit Symbol

Package Pinout:

Pin Number

Name

GATE

DRAIN

SOURCE

DRAIN

DS-CPC3909-R01

www.ixysic.com

12 3 4 5 6 7

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与CPC3909相关器件

型号	品牌	获取价格	描述	数据表
CPC3909C	IXYS	获取价格	Depletion-Mode FET
CPC3909CTR	IXYS	获取价格	Depletion-Mode FET
CPC3909Z	IXYS	获取价格	Depletion-Mode FET
CPC3909ZTR	IXYS	获取价格	Depletion-Mode FET
CPC3960	IXYS	获取价格	Depletion-Mode FET
CPC3960	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC3960Z	IXYS	获取价格	Depletion-Mode FET
CPC3960ZTR	IXYS	获取价格	Depletion-Mode FET
CPC3980	IXYS	获取价格	N-Channel Depletion-Mode
CPC3980	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经