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CP736V-2N3635 PDF预览

CP736V-2N3635

更新时间: 2024-10-28 21:22:39
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CENTRAL /
页数 文件大小 规格书
5页 686K
描述
Small Signal Bipolar Transistor,

CP736V-2N3635 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.64
Base Number Matches:1

CP736V-2N3635 数据手册

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CP736V-2N3635  
PNP - High Voltage Transistor Die  
1.0 Amp, 140 Volt  
www.centralsemi.com  
The CP736V-2N3635 die is a PNP silicon transistor designed for high voltage amplifier  
applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
17.3 x 17.3 MILS  
7.1 MILS  
Die Thickness  
Base Bonding Pad Size  
Emitter Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
3.9 x 3.9 MILS  
3.9 x 3.9 MILS  
Al-Si - 30,000Å  
Au - 9,000Å  
1.8 MILS  
B
E
5 INCHES  
Gross Die Per Wafer  
57,735  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
140  
140  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
V
V
Emitter-Base Voltage  
5.0  
Continuous Collector Current  
Operating and Storage Junction Temperature  
I
1.0  
A
C
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=100V  
100  
nA  
CBO  
CB  
I
V
=3.0V  
50  
nA  
V
EBO  
EB  
BV  
BV  
BV  
I =100μA  
140  
140  
5.0  
CBO  
CEO  
EBO  
C
I =10mA  
V
C
I =10μA  
V
E
V
V
V
V
I =10mA, I =1.0mA  
0.3  
0.5  
0.8  
0.9  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
V
C
B
I =10mA, I =1.0mA  
V
C
B
I =50mA, I =5.0mA  
0.65  
80  
V
C
B
h
h
h
h
h
h
V
=10V, I =0.1mA  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
=10V, I =1.0mA  
90  
FE  
C
=10V, I =10mA  
100  
100  
50  
FE  
C
=10V, I =50mA  
300  
320  
FE  
C
=10V, I =150mA  
FE  
C
=10V, I =10mA, f=1.0kHz  
80  
fe  
C
f
=30V, I =30mA, f=100MHz  
200  
MHz  
T
C
R0 (4-August 2016)  
www.centralsemi.com  

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