Datasheet > CP736V-CMPT5401

CP736V-CMPT5401

更新时间： 2024-10-29 14:53:31

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CENTRAL		/
页数	文件大小	规格书
4页	532K
描述
150V,600mA,350mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)

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CP736V-CMPT5401 数据手册

CP736V-CMPT5401

PNP - High Voltage Transistor Die

0.6 Amp, 150 Volt

www.centralsemi.com

The CP736V-CMPT5401 die is a PNP silicon transistor designed for high voltage ampliﬁer

applications.

MECHANICAL SPECIFICATIONS:

Die Size

17.3 x 17.3 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.9 x 3.9 MILS

Al-Si - 17,000Å

Au - 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

57,735

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

160

150

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Operating and Storage Junction Temperature

600

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

CBO

=3.0V

EBO

I =100µA

160

150

5.0

CBO

CEO

I =1.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.2

0.5

1.0

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

240

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

200

R2 (23-May 2017)

www.centralsemi.com

12 3 4

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