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CP353-2N3506 PDF预览

CP353-2N3506

更新时间: 2024-11-26 17:01:11
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
9页 709K
描述
40V,3A,1W Bare die,65.748 X 65.748 mils,Transistor-Bipolar Power (>1A)

CP353-2N3506 数据手册

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PROCESS CP353V  
Small Signal Transistors  
NPN - High Current Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
66 x 66 MILS  
Die Thickness  
7.1 MILS  
Base Bonding Pad Area  
Emitter 1 Bonding Pad Area  
Emitter 2 Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
7.9 x 7.9 MILS  
7.9 x 9.5 MILS  
7.9 x 9.5 MILS  
Al-Si - 30,000Å  
Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å  
GEOMETRY  
GROSS DIE PER 5 INCH WAFER  
3,878  
PRINCIPAL DEVICE TYPES  
CZT853  
R2 (22-March 2010)  
www.centralsemi.com  

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