CP361X-CEDM7001
N-Channel MOSFET Die
Enhancement-Mode
www.centralsemi.com
The CP361X-CEDM7001 is a silicon N-Channel enhancement-mode MOSFET die process
designed for high speed pulsed amplifier and driver applications.
MECHANICAL SPECIFICATIONS:
Die Size
14.2 x 14.2 MILS
5.5 MILS
Die Thickness
Gate Bonding Pad Size
Source Bonding Pad Size
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
3.94 x 3.94 MILS
3.94 x 7.08 MILS
Al-Si – 35,000Å
Au – 9,000Å
2.0 MILS
6 INCHES
Gross Die Per Wafer
123,000
BACKSIDE COLLECTOR
R0
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
20
10
DS
Gate-Source Voltage
V
V
GS
Continuous Drain Current (Steady State)
Peak Drain Current, tp=10μs
Operating and Storage Junction Temperature
I
100
mA
mA
°C
D
I
200
DM
T , T
-65 to +150
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, V =0
1.0
μA
GSSF GSSR
GS
DS
GS
DS
I
=20V, V =0
GS
1.0
μA
V
DSS
BV
=0, I =100μA
20
DSS
GS(th)
D
V
=V , I =250μA
0.6
0.9
3.0
4.0
15
V
DS GS
D
r
r
r
=4.0V, I =10mA
0.9
1.3
Ω
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DD
DD
D
=2.5V, I =10mA
Ω
D
=1.5V, I =1.0mA
Ω
D
g
=10V, I =100mA
100
mS
pF
pF
pF
nC
nC
nC
ns
ns
FS
D
C
C
C
=3.0V, V =0, f=1.0MHz
4.0
9.0
rss
iss
GS
=3.0V, V =0, f=1.0MHz
GS
=3.0V, V =0, f=1.0MHz
9.5
oss
GS
Q
Q
Q
=10V, V =4.5V, I =100mA
GS
0.566
0.16
0.08
50
g(tot)
gs
D
=10V, V =4.5V, I =100mA
GS
D
=10V, V =4.5V, I =100mA
gd
GS
D
t
t
=3.0V, V =2.5V, I =10mA
on
off
GS
D
=3.0V, V =2.5V, I =10mA
75
GS
D
R0 (6-June 2016)