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CP361X-CEDM7001 PDF预览

CP361X-CEDM7001

更新时间: 2024-11-26 14:54:11
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4页 807K
描述
100mA,20V Bare die,14.173 X 14.173 mils,MOSFET

CP361X-CEDM7001 数据手册

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CP361X-CEDM7001  
N-Channel MOSFET Die  
Enhancement-Mode  
www.centralsemi.com  
The CP361X-CEDM7001 is a silicon N-Channel enhancement-mode MOSFET die process  
designed for high speed pulsed amplifier and driver applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
14.2 x 14.2 MILS  
5.5 MILS  
Die Thickness  
Gate Bonding Pad Size  
Source Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
3.94 x 3.94 MILS  
3.94 x 7.08 MILS  
Al-Si – 35,000Å  
Au – 9,000Å  
2.0 MILS  
6 INCHES  
Gross Die Per Wafer  
123,000  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
SYMBOL  
UNITS  
V
A
V
20  
10  
DS  
Gate-Source Voltage  
V
V
GS  
Continuous Drain Current (Steady State)  
Peak Drain Current, tp=10μs  
Operating and Storage Junction Temperature  
I
100  
mA  
mA  
°C  
D
I
200  
DM  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, V =0  
1.0  
μA  
GSSF GSSR  
GS  
DS  
GS  
DS  
I
=20V, V =0  
GS  
1.0  
μA  
V
DSS  
BV  
=0, I =100μA  
20  
DSS  
GS(th)  
D
V
=V , I =250μA  
0.6  
0.9  
3.0  
4.0  
15  
V
DS GS  
D
r
r
r
=4.0V, I =10mA  
0.9  
1.3  
Ω
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
D
=2.5V, I =10mA  
Ω
D
=1.5V, I =1.0mA  
Ω
D
g
=10V, I =100mA  
100  
mS  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
FS  
D
C
C
C
=3.0V, V =0, f=1.0MHz  
4.0  
9.0  
rss  
iss  
GS  
=3.0V, V =0, f=1.0MHz  
GS  
=3.0V, V =0, f=1.0MHz  
9.5  
oss  
GS  
Q
Q
Q
=10V, V =4.5V, I =100mA  
GS  
0.566  
0.16  
0.08  
50  
g(tot)  
gs  
D
=10V, V =4.5V, I =100mA  
GS  
D
=10V, V =4.5V, I =100mA  
gd  
GS  
D
t
t
=3.0V, V =2.5V, I =10mA  
on  
off  
GS  
D
=3.0V, V =2.5V, I =10mA  
75  
GS  
D
R0 (6-June 2016)  

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