Datasheet > CP357X-CMLDM3737

CP357X-CMLDM3737

更新时间： 2024-09-17 14:52:35

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	545K
描述
540mA,20V Bare die,22.000 X 17.000 mils,MOSFET

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CP357X-CMLDM3737 数据手册

CP357X-CMLDM3737

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP357X-CMLDM3737 is a silicon N-Channel MOSFET designed for high speed pulsed

ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

22 x 17 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.5 x 3.5 MILS

14.5 x 19.4 MILS

Al-Si – 35,000Å

Au – 9,000Å

1.97 MILS

BACKSIDE DRAIN

6 INCHES

Gross Die Per Wafer

63,845

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

8.0

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current (tp=10μs)

Operating and Storage Junction Temperature

540

1.5

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

=4.5V, V =0

MIN

TYP

MAX

5.0

UNITS

ꢀA

, I

GSSF GSSR GS

=16V, V =0

1.0

ꢀA

DSS

=0, I =250ꢀA

DSS

GS(th)

=V , I =250ꢀA

0.45

1.0

1.2

0.55

0.7

0.9

DS GS

=0, I =350mA

=4.5V, I =540mA

DS(ON)

=2.5V, I =500mA

=1.8V, I =350mA

=16V, V =0, f=1.0MHz

rss

iss

=16V, V =0, f=1.0MHz

150

=16V, V =0, f=1.0MHz

oss

=10V, V =4.5V, I =500mA

g(tot)

1.58

0.17

=10V, V =4.5V, I =500mA

0.24

=10V, V =4.5V,

off

I =540mA, R =10Ω

R0 (19-December 2016)

12 3 4

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