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CP314_08 PDF预览

CP314_08

更新时间: 2024-10-28 09:30:07
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 224K
描述
Small Signal Transistor NPN - High Current Transistor Chip

CP314_08 数据手册

 浏览型号CP314_08的Datasheet PDF文件第2页 
TM  
PROCESS CP314  
Small Signal Transistor  
NPN - High Current Transistor Chip  
Central  
Semiconductor Corp.  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
40 x 40 MILS  
9.0 MILS  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
7.9 x 8.7 MILS  
9.0 x 14 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
6,936  
PRINCIPAL DEVICE TYPES  
CBCP68  
CBCX68  
CZT651  
MPS650  
MPS651  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R3 (8-October 2008)