Datasheet > CP315V_10

CP315V_10

更新时间： 2022-05-13 15:57:40

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	409K
描述
Power Transistors NPN - High Current Transistor Chip

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

CP315V_10 数据手册

PROCESS CP315V

Power Transistors

NPN - High Current Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

40 x 40 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

7.9 x 8.7 MILS

9.0 x 14 MILS

Al - 30,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

6,936

PRINCIPAL DEVICE TYPES

CXT3150

CZT3150

R2 (22-March 2010)

www.centralsemi.com

下载PDF

型号	品牌	描述	获取价格	数据表
CP316	CENTRAL	Small Signal Transistor NPN - High Voltage Transistor Chip	获取价格
CP316-2N5551	CENTRAL	160V,600mA,625mW Bare die,20.000 X 20.000 mils,Transistor-Small Signal (<=1A)	获取价格
CP316V	CENTRAL	Small Signal Transistors NPN - High Voltage Transistor Chip	获取价格
CP316V_10	CENTRAL	Small Signal Transistors NPN - High Voltage Transistor Chip	获取价格
CP316V-2N5551	CENTRAL	160V,600mA,625mW Bare die,20.000 X 20.000 mils,Transistor-Small Signal (<=1A)	获取价格
CP316V-2N5551-CG	CENTRAL	Transistor	获取价格