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CP316V-CMPT5551-CT PDF预览

CP316V-CMPT5551-CT

更新时间: 2024-01-29 13:02:43
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 233K
描述
Transistor

CP316V-CMPT5551-CT 数据手册

 浏览型号CP316V-CMPT5551-CT的Datasheet PDF文件第2页 
PROCESS CP316V  
Small Signal Transistors  
NPN - High Voltage Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
20 x 20 MILS  
7.1 MILS  
Die Size  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
4.0 x 4.0 MILS  
4.7 x 4.7 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
29,659  
PRINCIPAL DEVICE TYPES  
CMPT5551  
CXT5551  
CZT5551  
2N5551  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R1 (8-October 2008)  

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