Datasheet > CP316V-CXT5551-WS

CP316V-CXT5551-WS

更新时间： 2025-08-10 13:17:39

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CP316V-CXT5551-WS 技术参数

PROCESS CP316V

Small Signal Transistors

NPN - High Voltage Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

20 x 20 MILS

7.1 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

4.0 x 4.0 MILS

4.7 x 4.7 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

29,659

PRINCIPAL DEVICE TYPES

CMPT5551

CXT5551

CZT5551

2N5551

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R1 (8-October 2008)

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