5秒后页面跳转
CP317-BFY90-CG PDF预览

CP317-BFY90-CG

更新时间: 2024-11-07 21:15:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 178K
描述
Transistor

CP317-BFY90-CG 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

CP317-BFY90-CG 数据手册

 浏览型号CP317-BFY90-CG的Datasheet PDF文件第2页 
TM  
PROCESS CP317  
Small Signal Transistor  
NPN - RF Transistor Chip  
Central  
Semiconductor Corp.  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
Die Thickness  
14.5 x 14.5 MILS  
9.0 MILS  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
2.4 x 2.2 MILS  
2.4 x 2.2 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
53,730  
PRINCIPAL DEVICE TYPES  
CMPT918  
2N918  
2N2857  
2N5179  
2N5770  
BFY90  
PN3563  
PN3564  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R2 (1-August 2002)