Datasheet > CP317X-BFY90

CP317X-BFY90

更新时间： 2024-11-08 17:01:47

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描述
15V,25mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)

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CP317X-BFY90 数据手册

CP317X-BFY90

NPN - RF Transistor Die

50mA, 15 Volt

www.centralsemi.com

The CP317X-BFY90 is a silicon NPN RF transistor designed for low noise, high frequency

ampliﬁer and high output oscillator applications.

MECHANICAL SPECIFICATIONS:

Die Size

14.57 x 14.57 MILS

5.9 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

2.4 x 2.2 MILS

Al-Si – 12,000Å

Au-As – 9,000Å

2.3 MILS

5 INCHES

Gross Die Per Wafer

81,751

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

SYMBOL

UNITS

°C

2.5

CBO

CER

CEO

EBO

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current (f>1.0MHz)

Operating and Storage Junction Temperature

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

UNITS

=15V

CBO

I =10μA

2.5

CBO

CER

CEO

EBO

I =1.0mA, R =50Ω

I =1.0mA

I =10μA

=1.0V, I =2.0mA

=1.0V, I =25mA

=5.0V, I =2.0mA, f=500MHz

=5.0V, I =25mA, f=500MHz

=10V, I =0, f=1.0MHz

=5.0V, I =2.0mA, f=1.0MHz

=10V, I =14mA, f=200MHz

=10V, I =14mA, f=800MHz

=5.0V, I =2.0mA, f=100kHz

=5.0V, I =2.0mA, f=200MHz

=5.0V, I =2.0mA, f=500MHz, R =50Ω

=5.0V, I =2.0mA, f=800MHz

150

125

1.0

1.3

GHz

1.5

0.8

8.0

5.5

4.0

3.5

5.0

=10V, I =14mA, f=205MHz

R0 (9-August 2017)

12 3 4

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