Datasheet > CP316-2N5551

CP316-2N5551

更新时间： 2024-10-30 14:54:23

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
9页	508K
描述
160V,600mA,625mW Bare die,20.000 X 20.000 mils,Transistor-Small Signal (<=1A)

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CP316-2N5551 数据手册

PROCESS CP316

Small Signal Transistor

NPN - High Voltage Transistor Chip

Central

Semiconductor Corp.

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

Die Thickness

20 x 20 MILS

9.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

4.0 x 4.0 MILS

4.7 x 4.7 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

29,250

PRINCIPAL DEVICE TYPES

CMPT5551

CXT5551

CZT5551

2N5551

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R2 (1-August 2002)

12 3 4 5 6 7...9

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