Datasheet > CP316V

CP316V

更新时间： 2024-10-29 03:26:23

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	193K
描述
Small Signal Transistors NPN - High Voltage Transistor Chip

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CP316V 数据手册

PROCESS CP316V

Small Signal Transistors

NPN - High Voltage Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

20 x 20 MILS

7.1 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

4.0 x 4.0 MILS

4.7 x 4.7 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

29,250

PRINCIPAL DEVICE TYPES

CMPT5551

CXT5551

CZT5551

2N5551

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R0 (22-March 2005)

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型号	品牌	获取价格	描述	数据表
CP316V_10	CENTRAL	获取价格	Small Signal Transistors NPN - High Voltage Transistor Chip
CP316V-2N5551	CENTRAL	获取价格	160V,600mA,625mW Bare die,20.000 X 20.000 mils,Transistor-Small Signal (<=1A)
CP316V-2N5551-CG	CENTRAL	获取价格	Transistor
CP316V-2N5551-CT	CENTRAL	获取价格	Transistor
CP316V-2N5551-WN	CENTRAL	获取价格	Transistor
CP316V-2N5551-WS	CENTRAL	获取价格	Transistor
CP316V-CMPT5551-CG	CENTRAL	获取价格	Transistor
CP316V-CMPT5551-CT	CENTRAL	获取价格	Transistor
CP316V-CMPT5551-WN	CENTRAL	获取价格	Transistor
CP316V-CMPT5551-WS	CENTRAL	获取价格	Transistor