Datasheet > CP314V-MPS651

CP314V-MPS651

更新时间： 2023-12-06 20:10:32

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页数	文件大小	规格书
4页	519K
描述
60V,2A,625mW Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)

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CP314V-MPS651 数据手册

CP314V-MPS651

NPN - High Current Transistor Die

www.centralsemi.com

The CP314V-MPS651 is a silicon NPN transistor designed for high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

40.2 x 40.2 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.9 x 8.7 MILS

9.0 x 14 MILS

Al – 30,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

10,583

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Operating and Storage Junction Temperature

2.0

-65 to +150

°C

J_,stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=80V

100

CBO

=4.0V

100

EBO

I =100µA

CBO

CEO

I =10mA

I =10µA

5.0

EBO

I =1.0A, I =100mA

0.3

0.5

1.2

1.0

CE(SAT)

BE(SAT)

BE(ON)

I =2.0A, I =200mA

I =1.0A, I =100mA

=2.0V, I =1.0A

=2.0V, I =50mA

=2.0V, I =500mA

=2.0V, I =1.0A

=2.0V, I =2.0A

=5.0V, I =50mA, f=100MHz

MHz

R0 (6-June 2016)

12 3 4

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