Datasheet > CP307-MPSA14-CG

CP307-MPSA14-CG

更新时间： 2024-10-28 15:29:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	209K
描述
Transistor

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中文翻译

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技术参数
数据手册

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CP307-MPSA14-CG 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

CP307-MPSA14-CG 数据手册

PROCESS CP307

Central

Small Signal Transistor

NPN - Silicon Darlington Transistor Chip

Semiconductor Corp.

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

Die Thickness

27 x 27 MILS

9.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.3 x 3.8 MILS

5.3 x 6.5 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

15,440

PRINCIPAL DEVICE TYPES

2N6426

2N6427

CMPT6427

CMPTA13

CMPTA14

CXTA14

CZTA14

MPSA13

MPSA14

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

R3 (1-August 2002)

www.centralsemi.com

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