Datasheet > CP307-MPSA27

CP307-MPSA27

更新时间： 2024-10-29 14:54:23

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	692K
描述
500mA,60V Bare die,27.170 X 27.170 mils,Transistor-Small Signal (<=1A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CP307-MPSA27 数据手册

PROCESS CP307

Small Signal Transistor

NPN - Silicon Darlington Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

27 x 27 MILS

9.0 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.3 x 3.8 MILS

5.3 x 6.5 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

15,165

PRINCIPAL DEVICE TYPES

2N6426

2N6427

CMPT6427

CMPTA13

CMPTA14

CXTA14

CZTA14

MPSA13

MPSA14

MPSA27

BACKSIDE COLLECTOR

R6 (22-March 2010)

www.centralsemi.com

12 3 4 5

中文翻译

下载PDF

与CP307-MPSA27相关器件

型号	品牌	获取价格	描述	数据表
CP307V-2N5308	CENTRAL	获取价格	300mA,40V Bare die,27.170 X 27.170 mils,Transistor-Small Signal (<=1A)
CP307V-MPSA13	CENTRAL	获取价格	500mA,30V Bare die,27.170 X 27.170 mils,Transistor-Small Signal (<=1A)
CP308	PANJIT	获取价格	SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRE
CP308	TRSYS	获取价格	SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A
CP3082	OKAYA	获取价格	Trans Voltage Suppressor Diode, 66.4V V(RWM), Unidirectional
CP309	CENTRAL	获取价格	Power Transistor NPN - Low Saturation Transistor Chip
CP309_10	CENTRAL	获取价格	Power Transistor NPN - Low Saturation Transistor Chip
CP309-CMPT3090L-CG	CENTRAL	获取价格	Transistor
CP309-CMPT3090L-CT	CENTRAL	获取价格	Transistor
CP309-CMPT3090L-WN	CENTRAL	获取价格	Transistor