Datasheet > CP307V-MPSA13

CP307V-MPSA13

更新时间： 2024-11-19 14:56:03

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CENTRAL		/
页数	文件大小	规格书
5页	624K
描述
500mA,30V Bare die,27.170 X 27.170 mils,Transistor-Small Signal (<=1A)

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CP307V-MPSA13 数据手册

CP307V-MPSA13

NPN - Darlington Transistor Die

0.5 Amp, 30 Volt

www.centralsemi.com

The CP307V-MPSA13 die is a silicon NPN Darlington power transistor designed for high gain

ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

27.2 x 27.2 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.3 x 3.8 MILS

5.3 x 6.5 MILS

Al – 30,000Å

Au – 13,000Å

1.97 mils

4 INCHES

Gross Die Per Wafer

15,165

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

500

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=30V

100

CBO

=10V

100

EBO

I =100µA

CES

CE(SAT)

BE(ON)

I =100mA, I =100µA

1.5

2.0

=5.0V, I =100mA

=5.0V, I =10mA

5.0K

10K

125

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

MHz

R0 (14-June 2018)

12 3 4 5

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