Datasheet > CP223-2N3866-WN

CP223-2N3866-WN

更新时间： 2024-09-15 14:48:35

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CP223-2N3866-WN 技术参数

PROCESS CP223

Small Signal Transistor

NPN - RF Transistor Chip

Central

Semiconductor Corp.

PROCESS DETAILS

Process

EPITAXIAL PLANAR

Die Size

Die Thickness

22 x 22 MILS

8.0 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.5 MILS DIAMETER

3.5 x 3.5 MILS

Al - 30,000

Au - 12,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

23,340

PRINCIPAL DEVICE TYPES

2N3866

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R1 (1-August 2002)

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型号	品牌	获取价格	描述	数据表
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