Datasheet > CP226V-2N4859A

CP226V-2N4859A

更新时间： 2024-09-16 14:55:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	735K
描述
4V,10V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET

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CP226V-2N4859A 数据手册

CP226V-2N4859A

N-Channel JFET Die

www.centralsemi.com

The CP226V-2N4859A is a silicon N-Channel small signal JFET designed for analog

switching and chopper applications.

MECHANICAL SPECIFICATIONS:

Die Size

20 x 17 MILS

7.1 MILS

Die Thickness

Gate Bonding Pad Size

Drain Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.2 x 3.2 MILS

Al – 30,000Å

Au – 9,000Å

1.97 MILS

5 INCHES

Gross Die Per Wafer

45,000

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Drain-Gate Voltage

Reverse Gate-Source Voltage

Forward Gate Current

GSR

°C

T , T

Operating and Storage Junction Temperature

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=15V, V =0

0.25

GSS

=15V, V =0

DSS

=15V, V =10V

0.25

D(OFF)

I =1.0µA, V =0

GSS

=15V, I =0.5nA

4.0

0.75

GS(OFF)

DS(ON)

I =20mA, V =0

=0, I =0, f =1.0kHz

=10V, V =0, f=1.0MHz

4.0

rss

iss

=10V, V =0, f=1.0MHz

=10V, V

=10V, I =20mA

5.0

3.0

GS(OFF)

=10V, I =20mA

off

R0 (09-May 2022)

12 3 4 5

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