Datasheet > CP230-2N6039

CP230-2N6039

更新时间： 2024-11-06 14:52:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
21页	669K
描述
4A,80V Bare die,80.000 X 80.000 mils,Transistor-Bipolar Power (>1A)

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CP230-2N6039 数据手册

CP230-2N6039

NPN - Darlington Transistor Die

4.0 Amp, 80 Volt

www.centralsemi.com

The CP230-2N6039 die is a silicon NPN Darlington power transistor designed for low speed

switching and ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

80 x 80 MILS

8.0 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

18 x 27 MILS

34 x 34 MILS

Al - 30,000Å

Ti/Pd/Ag - 20,000Å

2.4 mils

4 INCHES

Gross Die Per Wafer

1,650

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

4.0

8.0

Continuous Base Current

Operating and Storage Junction Temperature

100

°C

-65 to +150

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=80V

500

µA

CBO

CEV

CEO

EBO

=80V, V =1.5V

=80V

100

2.0

µA

=5.0V

I =100mA

CEO

CE(SAT)

BE(SAT)

BE(ON)

I =2.0A, I =8.0mA

2.0

3.0

4.0

2.8

I =4.0A, I =40mA

=3.0V, I =2.0A

=3.0V, I =500mA

500

750

100

=3.0V, I =2.0A

15K

100

=3.0V, I =4.0A

=10V, I =0, f=100kHz

R0 (5-May 2016)

12 3 4 5 6 7...21

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