Datasheet > CP226V-2N4393

CP226V-2N4393

更新时间： 2024-09-16 14:53:35

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	783K
描述
.5V,3V,50mA,1.8W Bare die,20.000 X 17.000 mils,JFET

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CP226V-2N4393 数据手册

CP226V-2N4393

N-Channel JFET Die

www.centralsemi.com

The CP226V-2N4393 is a silicon N-Channel small signal JFET designed for analog

switching and chopper applications.

MECHANICAL SPECIFICATIONS:

Die Size

20 x 17 MILS

7.1 MILS

Die Thickness

Gate Bonding Pad Size

Drain Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.2 x 3.2 MILS

Al – 30,000Å

Au – 9,000Å

1.97 MILS

5 INCHES

Gross Die Per Wafer

45,000

MAXIMUM RATINGS: (T =25°C)

Gate-Drain Voltage

SYMBOL

UNITS

Gate-Source Voltage

Gate Current

°C

Operating and Storage Junction Temperature

T , T

-65 to +175

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=20V

0.1

GSS

=20V

5.0

DSS

=20V, V =5.0V

0.1

D(OFF)

I =1.0μA

GSS

GS(OFF)

GS(f)

=20V, I =1.0nA

0.5

3.0

1.0

0.4

100

3.5

=0, I =1.0mA

I =3.0mA

DS(ON)

I =1.0mA, V =0

=5.0V, V =0, f=1.0MHz

=20V, V =0, f=1.0MHz

rss

iss

=3.0mA

off

D(ON)

=5.0V

GS(OFF)

R0 (24-February 2021)

12 3 4 5

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