Datasheet > CMXT2207_10

CMXT2207_10

更新时间： 2024-09-16 09:27:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	551K
描述
SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS

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CMXT2207_10 数据手册

CMXT2207

www.centralsemi.com

SURFACE MOUNT

DUAL COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXT2207 type is

a dual complementary silicon transistor manufactured

by the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, and designed

for small signal general purpose and switching

applications.

MARKING CODE: X07

SOT-26 CASE

MAXIMUM RATINGS: (T =25°C)

NPN

PNP

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

5.0

Continuous Collector Current

Power Dissipation

600

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

NPN

MAX

SYMBOL

TEST CONDITIONS

MIN

UNITS

=60V

=50V

=60V, T =125°C

=50V, T =125°C

=3.0V

=60V, V =3.0V

=30V, V =0.5V

μA

CBO

EBO

CEV

CBO

CEO

EBO

CE(SAT)

BE(SAT)

I =10μA

6.0

5.0

I =10mA

I =10μA

I =150mA, I =15mA

0.3

1.0

1.2

2.0

0.4

1.6

1.3

2.6

I =500mA, I =50mA

I =150mA, I =15mA

0.6

I =500mA, I =50mA

=10V, I =0.1mA

100

300

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

=1.0V, I =150mA

=10V, I =500mA

=20V, I =20mA, f=100MHz

MHz

=20V, I =50mA, f=100MHz

200

R3 (12-February 2010)

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