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CMXT2207BKLEADFREE PDF预览

CMXT2207BKLEADFREE

更新时间: 2024-11-06 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 94K
描述
Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP

CMXT2207BKLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.8最大集电极电流 (IC):0.6 A
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN/PNP最大功率耗散 (Abs):0.35 W
子类别:BIP General Purpose Small Signal表面贴装:YES
标称过渡频率 (fT):200 MHzBase Number Matches:1

CMXT2207BKLEADFREE 数据手册

 浏览型号CMXT2207BKLEADFREE的Datasheet PDF文件第2页 
TM  
CMXT2207  
Central  
SURFACE MOUNT  
SUPERmini™  
Semiconductor Corp.  
DUAL COMPLEMENTARY  
SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXT2207 type is  
a dual complementary silicon transistor manufactured  
by the epitaxial planar process, epoxy molded in a  
SUPERmini™ surface mount package, designed for  
small signal general purpose and switching applications.  
MARKING CODE: X07  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
NPN  
PNP  
SYMBOL  
UNITS  
V
V
V
mA  
mW  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
75  
40  
6.0  
60  
60  
5.0  
CBO  
CEO  
EBO  
I
P
600  
350  
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
357  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN  
PNP  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V  
=50V  
10  
nA  
nA  
µA  
µA  
nA  
nA  
nA  
V
CBO  
CBO  
CBO  
CBO  
EBO  
CEV  
CEV  
CB  
CB  
CB  
CB  
EB  
CE  
CE  
10  
=60V, T =125°C  
10  
A
=50V, T =125°C  
A
10  
=3.0V  
10  
10  
=60V, V =3.0V  
EB  
=30V, V =0.5V  
50  
BE  
BV  
BV  
BV  
I =10µA  
75  
40  
60  
60  
CBO  
CEO  
EBO  
C
I =10mA  
V
C
I =10µA  
6.0  
5.0  
V
E
V
V
V
V
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
0.4  
1.6  
1.3  
2.6  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
V
C
B
I =150mA, I =15mA  
0.6  
V
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
h
h
h
V
=10V, I =0.1mA  
35  
50  
75  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
V
=10V, I =1.0mA  
100  
100  
100  
FE  
C
=10V, I =10mA  
75  
FE  
C
=10V, I =150mA  
100  
50  
300  
300  
FE  
C
=1.0V, I =150mA  
FE  
C
=10V, I =500mA  
40  
50  
FE  
C
f
f
=20V, I =20mA, f=100MHz  
300  
MHz  
MHz  
T
C
=20V, I =50mA, f=100MHz  
200  
T
C
R2 (06-August 2003)  

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