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CMXT2907ALEADFREE PDF预览

CMXT2907ALEADFREE

更新时间: 2024-11-06 21:17:31
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 550K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6

CMXT2907ALEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.23最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):45 nsBase Number Matches:1

CMXT2907ALEADFREE 数据手册

 浏览型号CMXT2907ALEADFREE的Datasheet PDF文件第2页 
CMXT2907A  
www.centralsemi.com  
SURFACE MOUNT  
DUAL PNP  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXT2907A type  
is a dual PNP silicon transistor manufactured by  
the epitaxial planar process, epoxy molded in a  
SUPERmini™ surface mount package, and designed  
for small signal general purpose and switching  
applications.  
MARKING CODE: X2F  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
SYMBOL  
UNITS  
V
V
A
V
V
V
60  
60  
5.0  
600  
350  
CBO  
CEO  
EBO  
V
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
10  
UNITS  
nA  
µA  
nA  
V
V
V
V
V
I
I
I
V
V
V
=50V  
=50V, T =125°C  
=30V, V =0.5V  
BE  
CBO  
CBO  
CEV  
CBO  
CEO  
CB  
CB  
CE  
A
50  
BV  
BV  
BV  
V
V
V
V
h
h
h
h
h
I =10µA  
60  
60  
5.0  
C
I =10mA  
C
I =10µA  
EBO  
E
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
FE  
FE  
FE  
FE  
C
B
B
B
B
I =500mA, I =50mA  
C
I =150mA, I =15mA  
V
V
C
I =500mA, I =50mA  
C
V
=10V, I =0.1mA  
75  
100  
100  
100  
50  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CC  
CC  
CC  
CC  
CC  
CC  
C
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, I =1.0mA  
C
=10V, I =10mA  
C
=10V, I =150mA  
300  
C
=10V, I =500mA  
C
f
C
C
=20V, I =50mA, f=100MHz  
200  
MHz  
pF  
pF  
T
ob  
ib  
C
=10V, I =0, f=1.0MHz  
8.0  
30  
ns  
ns  
ns  
100  
80  
30  
E
=2.0V, I =0, f=1.0MHz  
C
t
t
t
t
t
=30V, V =0.5V, I =150mA, I =15mA  
BE B1  
45  
10  
40  
on  
d
r
C
C
C
=30V, V =0.5V, I =150mA, I =15mA  
BE B1  
=30V, V =0.5V, I =150mA, I =15mA  
BE B1  
=6.0V, I =150mA, I =I =15mA  
ns  
ns  
ns  
off  
s
C
C
C
B1 B2  
B1 B2  
=6.0V, I =150mA, I =I =15mA  
t
=6.0V, I =150mA, I =I =15mA  
B1 B2  
f
R3 (12-February 2010)  

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