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CMXT3946 PDF预览

CMXT3946

更新时间: 2024-11-25 22:40:15
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 94K
描述
SURFACE MOUNT SUPERmin DUAL COMPLEMENTARY SILICON TRANSISTOR

CMXT3946 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.21最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):70 ns
Base Number Matches:1

CMXT3946 数据手册

 浏览型号CMXT3946的Datasheet PDF文件第2页 
TM  
CMXT3946  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
SUPERmini™  
DUAL COMPLEMENTARY  
SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXT3946 type is a  
dual complementary silicon transistor manufactured by  
the epitaxial planar process, epoxy molded in a  
SUPERmini™ surface mount package, designed for  
small signal general purpose and switching applications.  
MARKING CODE: X46  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
NPN  
PNP  
SYMBOL  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
60  
40  
6.0  
40  
40  
CBO  
CEO  
EBO  
V
5.0  
V
I
200  
350  
mA  
mW  
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
357  
°C  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN  
PNP  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
MAX  
MIN MAX  
UNITS  
I
V
50  
50  
nA  
V
CEV  
CE  
EB  
BV  
BV  
BV  
I =10µA  
60  
40  
40  
CBO  
CEO  
C
I =1.0mA  
40  
V
C
I =10µA  
6.0  
5.0  
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.20  
0.30  
0.85  
0.95  
0.25  
0.40  
0.65 0.85  
0.95  
60  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
V
C
B
I =10mA, I =1.0mA  
0.65  
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA  
40  
70  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
V
V
V
V
V
V
=1.0V, I =1.0mA  
80  
FE  
C
=1.0V, I =10mA  
100  
60  
300  
100  
60  
300  
FE  
C
=1.0V, I =50mA  
FE  
C
=1.0V, I =100mA  
30  
30  
FE  
C
f
=20V, I =10mA, f=100MHz  
300  
250  
MHz  
pF  
T
C
C
C
=5.0V, I =0, f=1.0MHz  
4.0  
8.0  
10  
4.5  
10  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
pF  
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz  
1.0  
0.5  
100  
1.0  
2.0  
0.1  
100  
3.0  
12  
kΩ  
ie  
C
-4  
=10V, I =1.0mA, f=1.0kHz  
8.0  
400  
40  
10  
x10  
re  
fe  
C
=10V, I =1.0mA, f=1.0kHz  
400  
60  
C
=10V, I =1.0mA, f=1.0kHz  
µmhos  
oe  
C
NF  
=5.0V, I =100µA, R =1.0kΩ  
C S  
f=10Hz to 15.7kHz  
5.0  
35  
4.0  
35  
dB  
ns  
ns  
ns  
ns  
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA  
BE B1  
d
CC  
CC  
CC  
CC  
C
t
=3.0V, V =0.5V, I =10mA, I =1.0mA  
BE B1  
35  
35  
r
C
t
=3.0V, I =10mA, I =I =1.0mA  
B1 B2  
200  
50  
225  
75  
s
C
t
=3.0V, I =10mA, I =I =1.0mA  
B1 B2  
f
C
R2 (06-August 2003)  

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