Datasheet > CMXT3946_10

CMXT3946_10

更新时间： 2024-11-26 09:27:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	551K
描述
SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS

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数据手册

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CMXT3946_10 数据手册

CMXT3946

www.centralsemi.com

SURFACE MOUNT

DUAL COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXT3946 type is

a dual complementary silicon transistor manufactured

by the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, and designed

for small signal general purpose and switching

applications.

MARKING CODE: X46

SOT-26 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

NPN

PNP

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

5.0

Continuous Collector Current

Power Dissipation

200

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

NPN

MAX

PNP

SYMBOL

TEST CONDITIONS

=30V, V =3.0V

MIN

MIN MAX

UNITS

5.0

CEV

I =10μA

6.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.20

0.30

0.85

0.95

0.25

0.40

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

0.65

0.65 0.85

I =50mA, I =5.0mA

0.95

=1.0V, I =0.1mA

100

300

100

250

=1.0V, I =1.0mA

=1.0V, I =10mA

300

=1.0V, I =50mA

=1.0V, I =100mA

=20V, I =10mA, f=100MHz

MHz

=5.0V, I =0, f=1.0MHz

4.0

8.0

4.5

=0.5V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

1.0

0.5

2.0

0.1

kΩ

x10^-4

=10V, I =1.0mA, f=1.0kHz

R3 (12-February 2010)

中文翻译

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