Datasheet > CMXT2907ATR

CMXT2907ATR

更新时间： 2024-11-07 05:24:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	550K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SUPERMINI-6

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CMXT2907ATR 数据手册

CMXT2907A

www.centralsemi.com

SURFACE MOUNT

DUAL PNP

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMXT2907A type

is a dual PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

SUPERmini™ surface mount package, and designed

for small signal general purpose and switching

applications.

MARKING CODE: X2F

SOT-26 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

SYMBOL

UNITS

5.0

600

350

CBO

CEO

EBO

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=50V

=50V, T =125°C

=30V, V =0.5V

CBO

CEV

CBO

CEO

I =10µA

5.0

I =10mA

I =10µA

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=10V, I =0.1mA

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

=10V, I =500mA

=20V, I =50mA, f=100MHz

200

MHz

=10V, I =0, f=1.0MHz

8.0

100

=2.0V, I =0, f=1.0MHz

=30V, V =0.5V, I =150mA, I =15mA

BE B1

=30V, V =0.5V, I =150mA, I =15mA

BE B1

=30V, V =0.5V, I =150mA, I =15mA

BE B1

=6.0V, I =150mA, I =I =15mA

off

B1 B2

=6.0V, I =150mA, I =I =15mA

B1 B2

R3 (12-February 2010)

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