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CMPT4401TR PDF预览

CMPT4401TR

更新时间: 2024-11-10 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
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2页 324K
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CMPT4401TR 数据手册

 浏览型号CMPT4401TR的Datasheet PDF文件第2页 
CMPT4401 NPN  
CMPT4403 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPT4401 and  
CMPT4403 are complementary silicon transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
small signal general purpose amplifier and switching  
applications.  
MARKING CODES: CMPT4401: C2X  
CMPT4403: C2T  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
CMPT4401  
CMPT4403  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
60  
40  
40  
40  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMPT4401  
MIN MAX  
0.1  
CMPT4403  
SYMBOL  
TEST CONDITIONS  
MIN  
-
MAX  
UNITS  
I
I
V
V
=35V, V =0.4V  
-
0.1  
μA  
μA  
V
CEV  
BEV  
CE  
CE  
EB  
=35V, V =0.4V  
EB  
-
60  
40  
6.0  
-
0.1  
-
0.1  
BV  
BV  
BV  
I =100μA  
-
40  
40  
5.0  
-
-
CBO  
CEO  
C
I =1.0mA  
-
-
V
C
I =100μA  
-
0.40  
0.75  
0.95  
1.2  
-
-
0.40  
0.75  
0.95  
1.3  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
0.75  
-
0.75  
-
V
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
V
=1.0V, I =0.1mA  
20  
40  
80  
30  
60  
100  
CE  
CE  
CE  
C
V
V
=1.0V, I =1.0mA  
-
-
FE  
C
=1.0V, I =10mA  
-
-
FE  
C
R5 (1-February 2010)  

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