Datasheet > CMPT491E_10

CMPT491E_10

更新时间： 2024-09-21 12:50:07

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	397K
描述
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

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CMPT491E_10 数据手册

CMPT491E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT491E type is

an Enhanced version of the industry standard 491 NPN

silicon transistor. This device is manufactured by the

epitaxial planar process and epoxy molded in an

SOT-23 surface mount package. The CMPT491E

features Low V

designed for high current general purpose amplifier

applications.

, high h

and has been

CE(SAT)

FE,

MARKING CODE: C49

SOT-23 CASE

COMPLEMENTARY TYPE: CMPT591E

FEATURED ENHANCED SPECIFICATIONS:

♦ V

@ 1.0A = 0.4V MAX (from 0.5V MAX)

CE(SAT)

♦ h @ 500mA = 200 MIN (from 100 MIN)

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

°C

5.0

1.0

200

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

2.0

350

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=60V

=4.0V

CBO

EBO

I =100µA

5.0

CBO

CEO

I =10mA

♦^B^V^VEBO

I =500mA, I =50mA

0.20

0.40

1.1

I =100µA

CE(SAT)

♦^V

I =1.0A, I =100mA

CE(SAT)

BE(SAT)

BE(ON)

I =1.0A, I =100mA

=5.0V, I =1.0A

1.0

♦

=5.0V, I =1.0mA

=5.0V, I =500mA

200

150

600

♦

=5.0V, I =1.0A

=5.0V, I =2.0A

=10V, I =50mA, f=100MHz

=10V, I =0, f=1.0MHz

MHz

♦ Enhanced specification

R4 (27-January 2010)

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