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CMPT491ETRLEADFREE PDF预览

CMPT491ETRLEADFREE

更新时间: 2024-09-21 20:58:27
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 391K
描述
Transistor

CMPT491ETRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):1 A
配置:Single最小直流电流增益 (hFE):200
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):150 MHz
Base Number Matches:1

CMPT491ETRLEADFREE 数据手册

 浏览型号CMPT491ETRLEADFREE的Datasheet PDF文件第2页 
CMPT491E  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPT491E type is  
an Enhanced version of the industry standard 491 NPN  
silicon transistor. This device is manufactured by the  
epitaxial planar process and epoxy molded in an  
SOT-23 surface mount package. The CMPT491E  
features Low V  
designed for high current general purpose amplifier  
applications.  
, high h  
and has been  
CE(SAT)  
FE,  
MARKING CODE: C49  
SOT-23 CASE  
COMPLEMENTARY TYPE: CMPT591E  
FEATURED ENHANCED SPECIFICATIONS:  
V  
@ 1.0A = 0.4V MAX (from 0.5V MAX)  
CE(SAT)  
h @ 500mA = 200 MIN (from 100 MIN)  
FE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
V
V
A
mA  
A
mW  
°C  
A
V
V
V
80  
60  
5.0  
1.0  
200  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Continuous Base Current  
Peak Collector Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
C
I
B
I
2.0  
350  
CM  
P
D
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=60V  
=4.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
EBO  
CB  
EB  
BV  
BV  
I =100µA  
80  
60  
5.0  
CBO  
CEO  
C
I =10mA  
C
BVVEBO  
I =500mA, I =50mA  
0.20  
0.40  
1.1  
I =100µA  
E
CE(SAT)  
C
C
B
V  
V
I =1.0A, I =100mA  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
B
I =1.0A, I =100mA  
C
B
V
V
=5.0V, I =1.0A  
1.0  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
V
V
V
V
V
V
=5.0V, I =1.0mA  
=5.0V, I =500mA  
C
200  
200  
50  
15  
150  
C
600  
FE  
h
h
=5.0V, I =1.0A  
FE  
FE  
C
=5.0V, I =2.0A  
C
f
=10V, I =50mA, f=100MHz  
=10V, I =0, f=1.0MHz  
MHz  
pF  
T
C
E
C
10  
ob  
Enhanced specification  
R4 (27-January 2010)  

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