Datasheet > CMP60130U

CMP60130U

更新时间： 2024-05-23 22:21:34

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1086K
描述
TO-252

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CMP60130U 数据手册

CMP60130U/D

P-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMP60130U/D is the P-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: -60V

Marking Code = P60130X

Package type = X

ID: -11A

RDS_ON(@VGS=-10V) : < 196mΩ

RDS_ON(@VGS=-4.5V) : < 240mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

P60130X

Date Code = XXXX

Equivalent Circuit and Pin Configuration

Ordering Information

P/N

Package Type Packaging

Remark

ROHS

CMP60130U

CMP60130D

TO-252

TO-251

Tape and reel

Tube

Absolute Maximum Ratings (TC=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

-60

VGS

±20

TC=25°C

-11

Continuous Drain Current⁽¹⁾

Pulsed Drain Current ⁽²⁾

TC=100°C

-6

IDM

PD @TC=25°C

Derating Factor above 25°C

RθJC

-42

0.33

Total Power Dissipation ⁽³⁾

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Dec. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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