Datasheet > CMP6021S8

CMP6021S8

更新时间： 2024-05-23 22:22:06

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1199K
描述
SO-8

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CMP6021S8 数据手册

CMP6021S8

P-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMP6021S8 is the P-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: -60V

ID: -8.2A

Marking Code = P6021S8

Date Code = XXXX

P6021S8

XXXX

RDSON (@VGS=-10V) : < 23mΩ

RDSON (@VGS=-4.5V) : < 26mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SO-8

Part Number

Packaging

Reel Size

CMP6021S8 4000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-60

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

TA=70°C

-8.2

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

-6.6

IDM

-33

Total Power Dissipation @ TA=25°C ⁽²⁾

2.5

Thermal Resistance Junction-to-Ambient ⁽²⁾

RθJA

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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