Datasheet > CMKSH-3TTR

CMKSH-3TTR

更新时间： 2024-02-14 16:57:33

品牌	Logo	应用领域
CENTRAL		测试
页数	文件大小	规格书
2页	492K
描述
Diode,

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中文翻译

获取价格

技术参数
数据手册

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CMKSH-3TTR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.59	最大正向电压 (VF)：	0.33 V
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	最低工作温度：	-65 °C
最大功率耗散：	0.35 W	最大重复峰值反向电压：	30 V
最大反向电流：	100 µA	最大反向恢复时间：	0.005 µs
反向测试电压：	25 V	子类别：	Other Diodes
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

CMKSH-3TTR 数据手册

CMKSH-3T

www.centralsemi.com

SURFACE MOUNT

TRIPLE ISOLATED SILICON

SCHOTTKY DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKSH-3T

contains three (3) Isolated Silicon Schottky Diodes,

epoxy molded in a SOT-363 surface mount package.

This ULTRAmini™ device has been designed for

switching applications requiring a low forward

voltage drop.

MARKING CODE: KHT

SOT-363 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=10ms

Power Dissipation

100

RRM

350

FRM

750

FSM

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

V =25V

500

V =25V, T =100°C

100

I =100μA

I =2.0mA

0.29

0.40

0.74

7.0

0.33

0.45

1.00

I =15mA

I =100mA

V =1.0V, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

5.0

R4 (13-January 2010)

中文翻译

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