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CMKT2907AGTRPBFREE

更新时间： 2024-11-26 13:06:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	115K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMKT2907AGTRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.6 A
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

CMKT2907AGTRPBFREE 数据手册

Central

CMKT2907A

Semiconductor Corp.

ULTRAmini™

SURFACE MOUNT

DESCRIPTION:

DUAL PNP SILICON TRANSISTOR

The

CENTRAL

SEMICONDUCTOR

CMUT2907A type is a Dual PNP silicon

transistor manufactured by the epitaxial

planar process, epoxy molded in an

ULTRAmini™ surface mount package,

designed for small signal general purpose

and switching applications.

SOT-363 CASE

Marking Code is K07.

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

5.0

600

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX UNITS

=50V

µA

CBO

CEV

=50V, T =125°C

=30V, V =0.5V

I =10µA

5.0

CBO

CEO

I =10mA

I =10µA

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=10V, I =0.1mA

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

=10V, I =500mA

R0 ( 9 -October 2001)

中文翻译

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