Datasheet > CMKT2222ATRLEADFREE

CMKT2222ATRLEADFREE

更新时间： 2024-11-26 21:01:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	492K
描述
Transistor

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中文翻译

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技术参数
数据手册

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CMKT2222ATRLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.6 A
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	300 MHz	Base Number Matches：	1

CMKT2222ATRLEADFREE 数据手册

CMKT2222A

SURFACE MOUNT

DUAL NPN SMALL SIGNAL

SILICON SWITCHING

TRANSISTORS

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKT2222A

consists of two individually isolated 2222A NPN silicon

transistors, manufactured by the epitaxial planar

process and epoxy molded in an SOT-363 surface

mount package. This ULTRAmini™ device has

been designed for small signal general purpose and

switching applications.

MARKING CODE: K22

SOT-363 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

600

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=60V

CBO

CEV

EBO

=60V, T =125°C

μA

=60V, V =3.0V

=3.0V

I =10μA

CBO

CEO

I =10mA

I =10μA

6.0

EBO

I =150mA, I =15mA

0.3

1.0

1.2

2.0

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

0.6

I =500mA, I =50mA

=10V, I =0.1mA

=10V, I =1.0mA

=10V, I =10mA

=1.0V, I =150mA

=10V, I =150mA

100

300

=10V, I =500mA

CE C

=20V, I =20mA, f=100MHz

300

MHz

=10V, I =0, f=1.0MHz

8.0

=0.5V, I =0, f=1.0MHz

R4 (13-January 2010)

中文翻译

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