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CMKT2222ATRPBFREE PDF预览

CMKT2222ATRPBFREE

更新时间: 2023-01-03 02:21:48
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 492K
描述
Transistor,

CMKT2222ATRPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.82最大集电极电流 (IC):0.6 A
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):300 MHz

CMKT2222ATRPBFREE 数据手册

 浏览型号CMKT2222ATRPBFREE的Datasheet PDF文件第2页 
CMKT2222A  
SURFACE MOUNT  
DUAL NPN SMALL SIGNAL  
SILICON SWITCHING  
TRANSISTORS  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMKT2222A  
consists of two individually isolated 2222A NPN silicon  
transistors, manufactured by the epitaxial planar  
process and epoxy molded in an SOT-363 surface  
mount package. This ULTRAmini™ device has  
been designed for small signal general purpose and  
switching applications.  
MARKING CODE: K22  
SOT-363 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
75  
40  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
6.0  
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
mW  
°C  
C
P
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=60V  
10  
nA  
CBO  
CBO  
CEV  
EBO  
CB  
CB  
CE  
EB  
=60V, T =125°C  
10  
10  
10  
μA  
nA  
nA  
V
A
=60V, V =3.0V  
EB  
=3.0V  
BV  
BV  
BV  
I =10μA  
75  
40  
CBO  
CEO  
C
I =10mA  
V
C
I =10μA  
6.0  
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
V
C
B
I =150mA, I =15mA  
0.6  
V
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA  
35  
50  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=10V, I =1.0mA  
FE  
C
=10V, I =10mA  
75  
FE  
C
=1.0V, I =150mA  
50  
FE  
C
=10V, I =150mA  
100  
40  
300  
FE  
C
h
V
=10V, I =500mA  
FE  
CE C  
f
V
=20V, I =20mA, f=100MHz  
300  
MHz  
pF  
T
CE  
C
C
V
=10V, I =0, f=1.0MHz  
8.0  
25  
ob  
CB  
E
C
V
=0.5V, I =0, f=1.0MHz  
pF  
ib  
EB  
C
R4 (13-January 2010)  

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