5秒后页面跳转
CMA-84+ PDF预览

CMA-84+

更新时间: 2024-09-16 20:09:31
品牌 Logo 应用领域
MINI 射频微波
页数 文件大小 规格书
5页 398K
描述
Wide Band Low Power Amplifier,

CMA-84+ 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.72射频/微波设备类型:WIDE BAND LOW POWER
Base Number Matches:1

CMA-84+ 数据手册

 浏览型号CMA-84+的Datasheet PDF文件第2页浏览型号CMA-84+的Datasheet PDF文件第3页浏览型号CMA-84+的Datasheet PDF文件第4页浏览型号CMA-84+的Datasheet PDF文件第5页 
Wideband, High Dynamic Range, Ceramic  
Monolithic Amplifier  
CMA-84+  
50Ω  
DC to 7 GHz  
The Big Deal  
• Ceramic, hermetically sealed, nitrogen filled  
• Low profile case, 0.045”  
• High IP3, +38 dBm  
CASE STYLE: DL1721  
• High Gain, 24 dB  
• High POUT, +21 dBm  
Product Overview  
Mini-Circuits’ CMA-84+ is a wideband monolithic amplifier providing high dynamic range. It uses patented,  
Transient Protection Darlington Configuration circuit architecture and is fabricated using InGaP HBT tech-  
nology. The amplifier is bonded to a multilayer integrated LTCC substrate, then hermetically sealed under  
a controlled Nitrogen atmosphere with gold-plated cover, eutectic Au-Sn solder, and Ni-Pd-Au termination  
finish. CMA-series amplifiers have been tested to meet MIL requirements for gross leak, fine leak, thermal  
shock, vibration, acceleration, mechanical shock, and HTOL.  
Key Features  
Feature  
Advantages  
Ideal for use anywhere long-term reliability adds bottom-line value: high moisture areas,  
busy production lines, high-speed distribution centers, heavy industry, outdoor settings,  
and unmanned facilities, as well as military applications.  
Hermetically Sealed  
The amplifier covers the primary wireless communications bands including cellular,  
PCS, LTE, WiMAX, and satellite IF.  
Wideband, DC to 7 GHz  
The CMA-84+ matches industry leading IP3 performance relative to device size and  
power consumption. The combination of the design and HBT structure provides en-  
hanced linearity over a broad frequency range. This feature makes the amplifier ideal  
for use in:  
• Driver amplifiers for complex waveform upconverter paths  
• Drivers in linearized transmit systems  
High IP3 vs. DC power consumption  
• +38.1 dBm at 0.1 GHz  
• +35 dBm at 1 GHz  
High gain, 24 dB  
Reduces the number of gain stages, lowering component count and overall system cost.  
The amplifier delivers high output power with low DC power consumption.  
Saturated output power up to +22 dBm  
at P3dB  
CMA-84+ provides input return loss up to 14-27 dB and output return loss 5.6- 19.5 dB  
without the need for external matching components, simplifying board layouts and sav-  
ing space.  
No external matching components  
required  
Low inductance, repeatable performance, outstanding reliability in tough operating con-  
ditions, and small size (0.12 x 0.12 x 0.045”)  
Ceramic, hermetic package  
®
Mini-Circuits  
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com  
Page 1 of 5  

与CMA-84+相关器件

型号 品牌 获取价格 描述 数据表
CMA-8-4002 TELEDYNE

获取价格

Amplifier 4 GHz - 8 GHz
CMA-8-4003 TELEDYNE

获取价格

Amplifier 4 GHz - 8 GHz
CMA-8-4004 TELEDYNE

获取价格

Amplifier 4 GHz - 8 GHz
CMA8864-04 ETC

获取价格

I2C, Mixed Voltage clock Synthesizer with Buffer for PENTIUMTM & II CPU/PCI system
CMAA1IW-X PANDUIT

获取价格

Mini-Com® One Position Adapters
CMAD4448 CENTRAL

获取价格

SURFACE MOUNT SILICON ULTRA HIGH SPEED SWITCHING DIODE
CMAD4448_10 CENTRAL

获取价格

SURFACE MOUNT ULTRA HIGH SPEED SILICON SWITCHING DIODE
CMAD4448BK CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon, 0.80 X 0.60 MM, 0.40 MM HEIGHT, M
CMAD4448BKLEADFREE CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.25A, 120V V(RRM),
CMAD4448BKPBFREE CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.25A, 120V V(RRM),