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CMAD4448BKLEADFREE PDF预览

CMAD4448BKLEADFREE

更新时间: 2024-11-06 19:57:23
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 341K
描述
Rectifier Diode, 1 Element, 0.25A, 120V V(RRM),

CMAD4448BKLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:4 A
元件数量:1最高工作温度:150 °C
最大输出电流:0.25 A最大重复峰值反向电压:120 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

CMAD4448BKLEADFREE 数据手册

 浏览型号CMAD4448BKLEADFREE的Datasheet PDF文件第2页 
CMAD4448  
www.centralsemi.com  
SURFACE MOUNT  
ULTRA HIGH SPEED SILICON  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMAD4448  
is an ultra high speed switching diode ideal for  
applications where very small size and operational  
efficiency are prime requirements.  
MARKING CODE: M  
SOD-923 CASE  
APPLICATIONS:  
FEATURES:  
DC / DC Converters  
Voltage Clamping  
Protection Circuits  
Battery powered applications including  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
Current (I =250mA)  
Forward Voltage Drop (V =0.91V TYP @ 100mA)  
Extremely Fast Switching Speed (4ns Max)  
O
F
Miniture, 0.8 x 0.6 x 0.4mm, ultra low height profile  
TM  
FEMTOmini Surface Mount Package.  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
V
120  
250  
RRM  
Continuous Forward Current  
I
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
500  
FRM  
I
4.0  
FSM  
I
1.0  
A
FSM  
P
100  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
1250  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =50V  
MIN  
TYP  
MAX  
300  
100  
500  
UNITS  
nA  
μA  
nA  
V
I
I
I
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
BV  
I =100μA  
120  
0.55  
0.67  
0.85  
150  
0.59  
0.72  
0.91  
R
R
V
V
V
I =1.0mA  
0.65  
0.77  
1.0  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
2.0  
pF  
ns  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
R1 (8-January 2010)  

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