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CMAD6001BKLEADFREE PDF预览

CMAD6001BKLEADFREE

更新时间: 2024-11-06 13:01:35
品牌 Logo 应用领域
CENTRAL 整流二极管开关光电二极管
页数 文件大小 规格书
2页 183K
描述
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM),

CMAD6001BKLEADFREE 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:4 A元件数量:1
最高工作温度:150 °C最大输出电流:0.25 A
最大重复峰值反向电压:100 V最大反向恢复时间:3 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

CMAD6001BKLEADFREE 数据手册

 浏览型号CMAD6001BKLEADFREE的Datasheet PDF文件第2页 
TM  
Central  
CMAD6001  
Semiconductor Corp.  
SURFACE MOUNT  
SILICON ULTRA LOW LEAKAGE  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMAD6001 is  
an ultra low leakage switching diode ideal for  
applications where very small size and operational  
efficiency are prime requirements.  
MARKING CODE: Q  
SOD-923 CASE  
APPLICATIONS:  
FEATURES:  
z DC / DC Converters  
z Current (I =250mA)  
F
z Voltage Clamping  
z Forward Voltage Drop (V =1.1V MAX @ 100mA)  
F
z Protection Circuits  
z Low Reverse Current (500pA MAX @ 75V)  
z Miniature, 0.8 x 0.6 x 0.4mm, ultra low height profile  
FEMTOminiTM Surface Mount Package.  
z Battery powered applications including  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Forward Surge Current, tp=1 µsec.  
Forward Surge Current, tp=1 sec.  
Power Dissipation  
V
R
75  
V
100  
V
RRM  
I
250  
mA  
mA  
mA  
mW  
F
I
4000  
1000  
100  
FSM  
I
FSM  
P
D
Operating and Storage  
Junction Temperature  
T ,T  
-65 to +150  
1250  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
pA  
V
I
V =75V  
R
500  
R
BV  
R
I =100µA  
R
100  
V
F
I =1.0mA  
F
0.85  
0.95  
1.1  
V
V
F
I =10mA  
F
V
V
F
I =100mA  
F
V
C
T
V =0, f=1 MHz  
R
2.0  
pF  
µs  
t
I =I =10mA, R =100Rec. to 1.0mA  
3.0  
rr  
R
F
L
R0 (23-April 2007)  

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