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CMAD4448TR PDF预览

CMAD4448TR

更新时间: 2024-09-16 13:06:55
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 145K
描述
Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon, 0.80 X 0.60 MM, 0.40 MM HEIGHT, MINIATURE PACKAGE-2

CMAD4448TR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:0.80 X 0.60 MM, 0.40 MM HEIGHT, MINIATURE PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.42配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 VJESD-30 代码:R-PDSO-F2
JESD-609代码:e0最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.1 W
认证状态:Not Qualified最大重复峰值反向电压:120 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMAD4448TR 数据手册

 浏览型号CMAD4448TR的Datasheet PDF文件第2页 
TM  
Central  
CMAD4448  
Semiconductor Corp.  
SURFACE MOUNT  
SILICON ULTRA HIGH SPEED  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMAD4448  
is an ultra high speed switching diode ideal for  
applications where very small size and operational  
efficiency are prime requirements.  
MARKING CODE: M  
SOD-923 CASE  
APPLICATIONS:  
FEATURES:  
DC / DC Converters  
Current (I =250mA)  
O
Voltage Clamping  
Protection Circuits  
Battery powered applications including  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
Forward Voltage Drop (V =0.91V TYP @ 100mA)  
F
Extremely Fast Switching Speed (4ns Max)  
Miniture, 0.8 x 0.6 x 0.4mm, ultra low height profile  
FEMTOminiTM Surface Mount Package.  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
mA  
mA  
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1ms  
Forward Surge Current, tp=1s  
Power Dissipation  
V
120  
250  
500  
4.0  
1.0  
100  
RRM  
F
I
I
I
I
FRM  
FSM  
FSM  
A
mW  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
1250  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
BV  
I =100µA  
120  
150  
V
nA  
µA  
nA  
V
R
R
I
I
I
V =50V  
300  
100  
500  
0.65  
0.77  
1.0  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
V
V
V
I =1.0mA  
0.55  
0.67  
0.85  
0.59  
0.72  
0.91  
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1 MHz  
2.0  
pF  
ns  
T
R
t
I =I =10mA, R =100, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
R0 (20-April 2007)  

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