Datasheet > CJCD2005

CJCD2005

更新时间： 2024-11-06 14:53:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	2476K
描述
DFNWB2×3-6L

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数据手册

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CJCD2005 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DFNWB2×3-6L Plastic-Encapsulate MOSFETS

D FNWB2×3-6L

CJCD2005

Dual N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

Ω 4.5V

Ω@4.0V

9.5

9.7

20V

mΩ@3.8V

Ω@3.1V

Ω@2.5V

10.6

12.5

DESCRIPTION

The CJCD2005 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch,facilitated

by its common-drain configuration.

Equivalent Circuit

MARKING:

G2 S2

2005 = Part No.

Solid dot = Pin1 indicator.

XX = Code.

D1/D2

G1 S1

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MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

±12

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

Thermal Resistance from Junction to Ambient

Junction Temperature

R_θJA

T_j

83.3

150

℃/W

℃

Storage Temperature

T_stg

T_L

-55~+150

260

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

℃

Rev. - 1.3

www.jscj-elec.com

12 3 4 5 6

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