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CJD112_10 PDF预览

CJD112_10

更新时间: 2024-11-18 09:25:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 420K
描述
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

CJD112_10 数据手册

 浏览型号CJD112_10的Datasheet PDF文件第2页 
CJD112 NPN  
CJD117 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY SILICON  
POWER DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CJD112, CJD117  
types are Complementary Silicon Power Darlington  
Transistors manufactured in a surface mount package  
designed for low speed switching and amplifier  
applications.  
MARKING: FULL PART NUMBER  
DPAK TRANSISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
UNITS  
V
V
V
A
A
mA  
W
W
°C  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
V
V
V
100  
100  
5.0  
2.0  
4.0  
CBO  
CEO  
EBO  
I
C
I
CM  
I
50  
20  
B
P
P
D
D
Power Dissipation (T =25°C)  
1.75  
-65 to +150  
6.25  
71.4  
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
J
stg  
Θ
Θ
°C/W  
°C/W  
JC  
JA  
Thermal Resistance  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
20  
10  
500  
10  
20  
2.0  
100  
2.0  
3.0  
4.0  
2.8  
UNITS  
µA  
µA  
µA  
µA  
µA  
mA  
V
V
V
V
V
I
I
I
I
I
I
V
V
V
V
V
V
=50V  
CEO  
CEV  
CEV  
CBO  
CBO  
EBO  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
CE  
CE  
CE  
CB  
CB  
EB  
=80V, V  
=80V, V  
=80V  
=100V  
=5.0V  
=1.5V  
=1.5V, T =125°C  
BE(off)  
BE(off)  
C
BV  
I =30mA  
C
V
V
V
V
h
h
h
I =2.0A, I =8.0mA  
C
C
B
B
B
I =4.0A, I =40mA  
I =4.0A, I =40mA  
C
V
=3.0V, I =2.0A  
=3.0V, I =0.5A  
=3.0V, I =2.0A  
=3.0V, I =4.0A  
=10V, I =750mA, f=1.0MHz  
=10V, I =0, f=0.1MHz (CJD112)  
=10V, I =0, f=0.1MHz (CJD117)  
CE  
CE  
CE  
CE  
CE  
CB  
CB  
C
C
C
C
C
E
E
V
V
V
V
V
V
500  
1000  
200  
25  
12000  
FE  
FE  
f
MHz  
pF  
pF  
T
C
C
100  
200  
ob  
ob  
R2 (4-January 2010)  

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