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CJD127TIN/LEAD

更新时间： 2024-11-21 13:06:51

品牌	Logo	应用领域
CENTRAL		晶体晶体管功率双极晶体管达林顿晶体管放大器
页数	文件大小	规格书
2页	129K
描述
Power Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CJD127TIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.74	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	TIN LEAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CJD127TIN/LEAD 数据手册

Central

CJD122 NPN

CJD127 PNP

Semiconductor Corp.

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD122,

CJD127 types are Complementary Silicon Power

Darlington Transistors manufactured in a surface

mount package designed for low speed switching

and amplifier applications.

MARKING CODE: FULL PART NUMBER

DPAK TRANSISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

100

5.0

8.0

120

CBO

CEO

EBO

Power Dissipation

Power Dissipation (T =25°C)

1.75

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

6.25

°C

°C/W

stg

71.4

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=50V

CEO

CEV

CBO

EBO

CEO

CE(SAT)

BE(SAT)

BE(ON)

=100V, V

=100V

=1.5V

=1.5V, T =125 C

BE(off)

500

2.0

=5.0V

I =30mA

100

I =4.0A, I =16mA

2.0

4.0

4.5

2.8

12000

I =8.0A, I =80mA

=4.0V, I =4.0A

=4.0V, I =8.0A

1000

100

4.0

=4.0V, I =3.0A, f=1.0MHz

MHz

=10V, I =0, f=1.0MHz (CJD122)

200

300

=10V, I =0, f=1.0MHz (CJD127)

=4.0V, I =3.0A, f=1.0kHz

R1 (26-September 2002)

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