Datasheet > CJD175NPN

CJD175NPN

更新时间： 2024-11-26 00:53:43

品牌	Logo	应用领域
CDIL		/
页数	文件大小	规格书
3页	283K
描述
EPITAXIAL SILICON POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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CJD175NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

CJD176

CJD178

CJD180

PNP

EPITAXIAL SILICON POWER TRANSISTORS

CJD175

CJD177

CJD179

NPN

DPAK (TO-252)

Plastic Package

Intended for use in Medium Power Linear Switching Applications

ABSOLUTE MAXIMUM RATINGS

CJD179

CJD180

DESCRIPTION

SYMBOL

CJD175

CJD176

CJD177

CJD178

UNIT

V_CEO

V_CBO

V_EBO

I_C

Collector -Emitter Voltage

Collector -Base Voltage

Emitter Base Voltage

5.0

3.0

Collector Current

I_CM

Collector Peak Current

Power Dissipation @ T_a=25ºC

7.0

P_D

1.25

mW/ºC

Derate above 25ºC

Power Dissipation @ T_c=25ºC

P_D

Operating and Storage Junction

Temperature Range

T_j, T_stg

- 65 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Ambient in free air

R_{th (j-a)}

R_{th (j-c)}

100

ºC/W

Junction to Case

4.16

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

Collector Cut off Current

SYMBOL

TEST CONDITION

V_CB=45V_,I_E=0

V_CB=60V_,I_E=0

V_CB=80V_,I_E=0

V_EB=5V, I_C=0

MIN

MAX

100

1.0

UNIT

I_CBO

CJD175/76

CJD177/78

CJD179/80

I_EBO

*V_{CEO (sus)}

Emitter Cut off Current

Collector Emitter Sustaining Voltage

I_C=100mA, I_B=0

CJD175/76

CJD177/78

CJD179/80

*V_{CE (sat)}

I_C=1A, I_B=0.1A

Collector Emitter Saturation Voltage

0.8

1.3

*V_{BE (on)}

*h_FE

I_C=1A, V_CE=2V

I_C=150mA, V_CE=2V

I_C=1A, V_CE=2V

Base Emitter on Voltage

DC Current Gain

*h_FEGroup

I_C=150mA, V_CE=2V

- 6

- 10

- 16

100

160

250

Only CJD175/76/79

f_T

I_C=250mA, V_CE=10V

Transition Frequency

3.0

MHz

*Pulse test:- Pulse width=300ms, Duty cycle=1.5%

CJD175_180Rev110106E

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

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CJD180PNP	CDIL	获取价格	EPITAXIAL SILICON POWER TRANSISTORS