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CJD200TR13PBFREE PDF预览

CJD200TR13PBFREE

更新时间: 2024-11-10 05:49:07
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CENTRAL /
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2页 557K
描述
Transistor,

CJD200TR13PBFREE 数据手册

 浏览型号CJD200TR13PBFREE的Datasheet PDF文件第2页 
CJD200 NPN  
CJD210 PNP  
www.centralsemi.com  
SURFACE MOUNT SILICON  
COMPLEMENTARY  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CJD200 and  
CJD210 are complementary silicon power transistors  
manufactured in a surface mount package designed for  
high current amplifier applications.  
MARKING: FULL PART NUMBER  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
40  
25  
V
CBO  
CEO  
EBO  
V
V
V
V
8.0  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
I
5.0  
A
C
I
10  
A
CM  
I
1.0  
A
B
P
12.5  
1.4  
W
D
D
Power Dissipation (T =25°C)  
P
W
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
10  
°C  
°C/W  
°C/W  
J
stg  
Θ
JC  
JA  
Thermal Resistance  
Θ
89.3  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=40V  
100  
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=40V, T =125°C  
100  
100  
μA  
nA  
V
C
=8.0V  
BV  
I =10mA  
25  
CEO  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
V
V
V
V
V
I =500mA, I =50mA  
0.3  
0.75  
1.8  
V
C
B
I =2.0A, I =200mA  
V
C
B
I =5.0A, I =1.0A  
V
C
B
I =5.0A, I =1.0A  
2.5  
V
C
B
V
=1.0V, I =2.0A  
1.6  
V
CE  
CE  
CE  
CE  
CE  
CB  
CB  
C
h
h
h
V
V
V
V
V
V
=1.0V, I =500mA  
70  
45  
10  
65  
C
=1.0V, I =2.0A  
180  
FE  
C
=2.0V, I =5.0A  
FE  
C
f
=10V, I =100mA, f=10MHz  
MHz  
pF  
T
C
C
C
=10V, I =0, f=0.1MHz (CJD200)  
80  
ob  
ob  
E
=10V, I =0, f=0.1MHz (CJD210)  
120  
pF  
E
R3 (21-January 2013)  

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