Datasheet > CJD3055BKTIN/LEAD

CJD3055BKTIN/LEAD

更新时间： 2024-11-26 05:35:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	557K
描述
Transistor

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CJD3055BKTIN/LEAD 数据手册

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CJD2955 PNP

CJD3055 NPN

www.centralsemi.com

SURFACE MOUNT SILICON

COMPLEMENTARY

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD2955 and

CJD3055 are complementary silicon power transistors

manufactured by the epitaxial base process, mounted

in a surface mount package, and designed for high

current amplifier and switching applications.

MARKING: FULL PART NUMBER

DPAK CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CEO

EBO

5.0

Continuous Collector Current

Continuous Base Current

Power Dissipation

6.0

Power Dissipation (T =25°C)

Operating and Storage Junction Temperature

1.75

-65 to +150

6.25

71.4

T , T

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V

μA

CEO

CEV

CBO

EBO

=70V, V

=70V

=1.5V

2.0

μA

BE(off)

=1.5V, T =150°C

=70V, T =150°C

=5.0V

2.0

500

I =30mA

CEO

CE(SAT)

BE(ON)

I =4.0A, I =400mA

1.1

8.0

1.8

100

I =10A, I =3.3A

=4.0V, I =4.0A

5.0

2.0

=4.0V, I =10A

=10V, I =500mA, f=1.0MHz

MHz

R4 (21-January 2013)

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